Technology computer aided design : simulation for VLSI MOSFET pdf

1975 年在印度阿里加尔的阿里加尔穆斯林大学获得物理学硕士学位； 1979 年在印度加尔各答的加尔各答大学获得博士学位； 1983年在英国牛津大学获得博士学位，并于1983年至1985年在牛津大学克拉伦登实验室担任1851年皇家展览委员会博士后研究员。牛津大学沃尔夫森学院。他是克拉伦登实验室的导师和实验室讲师。他还是瑞典林雪平大学的访问学者；德国斯图加特马克斯普朗克研究所。他于 1987 年加入加尔各答 Jadavpur 大学，担任电子和电信工程专业的研究员。随后，他在 1996 年至 1999 年期间成为教授和物理系主任，以及孟加拉工程科学大学（BESU）理学院院长。后来他再次加入贾达普大学ETCE系担任教授。曾在日本东京工业大学、香港香港大学等多所大学担任客座教授。 1999年起任电子系教授

Technology computer aided design : simulation for VLSI MOSFET pdf 钱丹·库马尔·萨卡尔

Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus.

Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits
Introduces the advantages of TCAD simulations for device and process technology characterization
Presents the fundamental physics and mathematics incorporated in the TCAD tools
Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus)
Provides characterization of performances of VLSI MOSFETs through TCAD tools
Offers familiarization to compact modeling for VLSI circuit simulation
R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.